Highly uniform bipolar resistive switching characteristics in TiO2/BaTiO3/TiO2 multilayer

Nanoscale multilayer structure TiO2/BaTiO3/TiO2 has been fabricated on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. Highly uniform bipolar resistive switching (BRS) characteristics have been observed in Pt/TiO2/BaTiO3/TiO2/Pt cells. Analysis of the current-voltage relationship demonstrates that the space-charge-limited current conduction controlled by the localized oxygen vacancies should be important to the resistive switching behavior. X-ray photoelectron spectroscopy results indicated that oxygen vacancies in TiO2 play a crucial role in the resistive switching phenomenon and the introduced TiO2/BaTiO3 interfaces result in the high uniformity of bipolar resistive switching characteristics.