Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

We demonstrate the feasibility of multilevel recording in Pt/Bi1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi1−δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2013-12, Vol.103 (26)
Hauptverfasser: Jiménez, David, Miranda, Enrique, Tsurumaki-Fukuchi, Atsushi, Yamada, Hiroyuki, Suñé, Jordi, Sawa, Akihito
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Ferroelectric domains
Ferroelectric materials
Ferroelectricity
Heterostructures
Information storage
Multilevel
Recording
Switching
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We demonstrate the feasibility of multilevel recording in Pt/Bi1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi1−δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1−δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4855155