Ion implantation technology and ion sources
Ion implantation (I/I) technology has been developed with a great economic success of industries of VLSI (Very Large-Scale Integrated circuit) devices. Due to its large flexibility and good controllability, the I/I technology has been assuming various challenging requirements of VLSI evolutions, esp...
Gespeichert in:
| Veröffentlicht in: | Review of scientific instruments 2014-02, Vol.85 (2), p.02C315-02C315 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | Ion implantation (I/I) technology has been developed with a great economic success of industries of VLSI (Very Large-Scale Integrated circuit) devices. Due to its large flexibility and good controllability, the I/I technology has been assuming various challenging requirements of VLSI evolutions, especially in advanced evolutional characteristics of CMOSFET. Here, reviewing the demands of VLSI manufacturing to the I/I technology, required characteristics of ion implanters, and their ion sources are discussed. |
|---|---|
| ISSN: | 0034-6748 1089-7623 |
| DOI: | 10.1063/1.4854155 |