Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure

Low-temperature photoluminescence (PL) spectra of electron-hole systems in Si nanowires (NWs) prepared by thermal oxidization of Si fin structures were studied. Mapping of PL reveals that NWs with uniform width are formed over a large area. Annealing temperature dependence of PL peak intensities was...

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Veröffentlicht in:Optics express 2014-01, Vol.22 (2), p.1997-2006
Hauptverfasser: Sakurai, Yoko, Kakushima, Kuniyuki, Ohmori, Kenji, Yamada, Keisaku, Iwai, Hiroshi, Shiraishi, Kenji, Nomura, Shintaro
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Sprache:eng
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Zusammenfassung:Low-temperature photoluminescence (PL) spectra of electron-hole systems in Si nanowires (NWs) prepared by thermal oxidization of Si fin structures were studied. Mapping of PL reveals that NWs with uniform width are formed over a large area. Annealing temperature dependence of PL peak intensities was maximized at 400 °C for each NW type, which are consistent with previous reports. Our results confirmed that the micro-PL demonstrated here is one of the important methods for characterizations of the interface defects in Si NWs.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.22.001997