Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5−x/TiOxNy framework

We describe abnormal dual bipolar resistive switching events in simple Pt/Ta2O5−x/TiOxNy and Pt/Ta2O5−x/TiN matrices in which the typical switching directions (SD) are initially clockwise (CW). The negative difference region in a high resistance state before reaching the typical “CW set” process ena...

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Veröffentlicht in:Applied physics letters 2013-10, Vol.103 (18)
Hauptverfasser: Lee, Ah Rahm, Cheol Bae, Yoon, Ho Baek, Gwang, Bock Chung, Je, Sung Kang, Tae, Sun Lee, Jong, Park, Jea-Gun, Sik Im, Hyun, Pyo Hong, Jin
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Sprache:eng
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Zusammenfassung:We describe abnormal dual bipolar resistive switching events in simple Pt/Ta2O5−x/TiOxNy and Pt/Ta2O5−x/TiN matrices in which the typical switching directions (SD) are initially clockwise (CW). The negative difference region in a high resistance state before reaching the typical “CW set” process enables the SD transition to a counterclockwise direction. It thereby emphasizes the occurrence of a highly stable secondary bipolar resistive switching curve. The origin of two different switching modes is described by adapting a bias-dependent oxygen ion accumulation and depletion process at TiOxNy and TiN electrode interfaces and by performing various structural analyses.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4828561