Metal-insulator transition in SrTi1−xVxO3 thin films

Metal-insulator transition in SrTi1−xVxO3 thin films

Epitaxial SrTi1−xVxO3 (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher va...

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Veröffentlicht in:Applied physics letters 2013-11, Vol.103 (22)
Hauptverfasser: Gu, Man, Lu, Jiwei
Format: Artikel
Sprache:eng
Schlagworte:
Anderson localization
Applied physics
Deposition
Electron beams
Epitaxial growth
Fermi liquids
Insulators
Metal-insulator transition
Substrates
Thin films
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Zusammenfassung:Epitaxial SrTi1−xVxO3 (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x 
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4836576