Fabrication and characterizations of phosphorus-doped n-type BaSi sub(2) epitaxial films grown by molecular beam epitaxy

Fabrication and characterizations of phosphorus-doped n-type BaSi sub(2) epitaxial films grown by molecular beam epitaxy

Phosphorus (P)-doped BaSi sub(2) films were grown by molecular beam epitaxy. P-doped BaSi sub(2) showed n -type conductivity and the electron concentration increased up to 410 super(17) cm super(-3) at room temperature. The temperature dependence of electron concentration revealed that the activatio...

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Veröffentlicht in:Physica status solidi. C 2013-12, Vol.10 (12), p.1753-1755
Hauptverfasser: Takabe, R, Baba, M, Nakamura, K, Du, W, Khan, MA, Koike, S, Toko, K, Hara, KO, Usami, N, Suemasu, T
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Barium compounds
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container_end_page 1755
container_issue 12
container_start_page 1753
container_title Physica status solidi. C
container_volume 10
creator Takabe, R
Baba, M
Nakamura, K
Du, W
Khan, MA
Koike, S
Toko, K
Hara, KO
Usami, N
Suemasu, T
description Phosphorus (P)-doped BaSi sub(2) films were grown by molecular beam epitaxy. P-doped BaSi sub(2) showed n -type conductivity and the electron concentration increased up to 410 super(17) cm super(-3) at room temperature. The temperature dependence of electron concentration revealed that the activation energy was approximately 80 meV. ( copyright 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssc.201300326
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title Fabrication and characterizations of phosphorus-doped n-type BaSi sub(2) epitaxial films grown by molecular beam epitaxy
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