Synthesis and optical properties of CuInS sub(2) thin films prepared by sulfurization of electrodeposited Cu-In layers

The chalcopyrite CuInS sub(2) thin film was fabricated at 500 degree C for 2 h by sulfurization of Cu-In layers (as precursors) that were sulfurized in a glass tube with pure sulfur powder. The structural, morphological, and optical properties of CuInS sub(2) thin films are characterized using X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), and UV/Visible/NIR spectrophotometer. The study of UV/Visible/NIR absorption shows the band gap energy value of CuInS sub(2) thin films is 1.5 eV. The XRD pattern shows the film is pure CuInS sub(2); no other peaks, such as CuS or CuIn sub(5)S sub(8) were observed. Furthermore, the surface of the CuInS sub(2) film is compact characterized by FE-SEM, which also shows the disappearance of CuS on the surface at 500 degree C. The chalcopyrite CuInS sub(2) thin film was fabricated at 500 degree C for 2 h by sulfurization of Cu-In layers (as precursors) that were sulfurized in a glass tube with pure sulfur powder. The structural, morphological, and optical properties of CuInS sub(2) thin films are characterized using X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), and UV/Visible/NIR spectrophotometer. The study of UV/Visible/NIR absorption shows the band gap energy value of CuInS sub(2) thin films is 1.5 eV. The XRD pattern shows the film is pure CuInS sub(2); no other peaks, such as CuS or CuIn sub(5)S sub(8) were observed. Furthermore, the surface of the CuInS sub(2) ...