The evolution of Raman spectrum of graphene with the thickness of SiO2 capping layer on Si substrate

In this paper, we have systematically studied the evolution of Raman spectrum of graphene with the thickness of SiO2 capping layer on Si substrate. We find that, for both monolayer and bilayer graphenes, the intensities of D, G, and 2D bands, together with the intensity ratio of 2D to G Raman bands...

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Veröffentlicht in:	Applied physics letters 2013-11, Vol.103 (21)
Hauptverfasser:	Liu, Chu, Ma, Yaoguang, Li, Weisen, Dai, Lun
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Bands Bilayers Capping Evolution Graphene Silicon dioxide Silicon substrates Thickness
Online-Zugang:	Volltext
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