The evolution of Raman spectrum of graphene with the thickness of SiO2 capping layer on Si substrate

In this paper, we have systematically studied the evolution of Raman spectrum of graphene with the thickness of SiO2 capping layer on Si substrate. We find that, for both monolayer and bilayer graphenes, the intensities of D, G, and 2D bands, together with the intensity ratio of 2D to G Raman bands...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2013-11, Vol.103 (21)
Hauptverfasser: Liu, Chu, Ma, Yaoguang, Li, Weisen, Dai, Lun
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this paper, we have systematically studied the evolution of Raman spectrum of graphene with the thickness of SiO2 capping layer on Si substrate. We find that, for both monolayer and bilayer graphenes, the intensities of D, G, and 2D bands, together with the intensity ratio of 2D to G Raman bands (I2D/IG), oscillate quasi-periodically with SiO2 thickness increasing. The origin of the observed phenomena is theoretically analyzed. Our result shows that one must pay enough attention to the SiO2 thickness when using the Raman footprints, especially the commonly used I2D/IG, to identify the graphene layers transferred onto SiO2/Si substrate.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4832063