Transfer-free fabrication of graphene field effect transistor arrays using solid-phase growth of graphene on a SiO2/Si substrate

In this study, graphene field effect transistor arrays were fabricated, using solid-phase growth of graphene on a SiO2/Si substrate. Transfer-free fabrication was made possible by the fact that the graphene was grown not on a metal catalyst film, but on an insulating SiO2 substrate. Electrical isola...

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Veröffentlicht in:Applied physics letters 2013-10, Vol.103 (18)
Hauptverfasser: Tamaoki, Masato, Imaeda, Hideki, Kishimoto, Shigeru, Mizutani, Takashi
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Sprache:eng
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Zusammenfassung:In this study, graphene field effect transistor arrays were fabricated, using solid-phase growth of graphene on a SiO2/Si substrate. Transfer-free fabrication was made possible by the fact that the graphene was grown not on a metal catalyst film, but on an insulating SiO2 substrate. Electrical isolation process was also eliminated by employing a patterned growth of graphene. The resultant device exhibited satisfactorily good current-voltage characteristics, with a mobility of 590 cm2/V s.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4829137