Transfer-free fabrication of graphene field effect transistor arrays using solid-phase growth of graphene on a SiO2/Si substrate
In this study, graphene field effect transistor arrays were fabricated, using solid-phase growth of graphene on a SiO2/Si substrate. Transfer-free fabrication was made possible by the fact that the graphene was grown not on a metal catalyst film, but on an insulating SiO2 substrate. Electrical isola...
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Veröffentlicht in: | Applied physics letters 2013-10, Vol.103 (18) |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | In this study, graphene field effect transistor arrays were fabricated, using solid-phase growth of graphene on a SiO2/Si substrate. Transfer-free fabrication was made possible by the fact that the graphene was grown not on a metal catalyst film, but on an insulating SiO2 substrate. Electrical isolation process was also eliminated by employing a patterned growth of graphene. The resultant device exhibited satisfactorily good current-voltage characteristics, with a mobility of 590 cm2/V s. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4829137 |