Enhanced Lateral Current Transport Via the Front N sub(+) Diffused Layer of N-type High-Efficiency Back-Junction Back-Contact Silicon Solar Cells

Enhanced lateral current transport via the front N sub(+) diffused layer of N-type high-efficiency back-junction back-contact silicon solar cells was examined. Low-cost approaches to the high-efficiency back-contact and back-junction were adopted. (BC BJ) cell structure was intensively investigated. N-type back-contact back-junction solar cells were processed with the use of industrially relevant structuring technologies such as screen-printing and laser processing, resulting in the best efficiency of 21.3 percent on 1 ohm specific base resistivity and with a front surface diffusion of 148 ohml/sq. If the low-cost structuring technology was applied in the processing of the BJ BC cell structure, the pitch on the rear side of the cell drastically increased to values in the range of millimetres which significantly increased the lateral base resistance.