InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment
This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shiftthreshold voltage from 0.47 to 0 V. A 0.2 µm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak...
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| Veröffentlicht in: | Electronics letters 2013-03, Vol.49 (7), p.1-1 |
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| container_title | Electronics letters |
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| creator | Ho, Han-Chieh Gao, Zong-Yan Lin, Heng-Kuang Chiu, Pei-Chin Hsin, Yue-Ming Chyi, Jen-Inn |
| description | This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shiftthreshold voltage from 0.47 to 0 V. A 0.2 µm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak g[sub]m[/sub] of 83 mS/mm. [PUBLICATION ABSTRACT] |
| format | Article |
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The study found that hydrogen plasma treatment can effectively shiftthreshold voltage from 0.47 to 0 V. A 0.2 µm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak g[sub]m[/sub] of 83 mS/mm. 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The study found that hydrogen plasma treatment can effectively shiftthreshold voltage from 0.47 to 0 V. A 0.2 µm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak g[sub]m[/sub] of 83 mS/mm. 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The study found that hydrogen plasma treatment can effectively shiftthreshold voltage from 0.47 to 0 V. A 0.2 µm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak g[sub]m[/sub] of 83 mS/mm. [PUBLICATION ABSTRACT]</abstract><cop>Stevenage</cop><pub>John Wiley & Sons, Inc</pub><tpages>1</tpages></addata></record> |
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| identifier | ISSN: 0013-5194 |
| ispartof | Electronics letters, 2013-03, Vol.49 (7), p.1-1 |
| issn | 0013-5194 1350-911X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1475559719 |
| source | Wiley_OA刊; Wiley Blackwell Single Titles; Alma/SFX Local Collection; EZB Electronic Journals Library |
| subjects | Devices |
| title | InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment |
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