InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment

InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment

This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shiftthreshold voltage from 0.47 to 0 V. A 0.2 µm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak...

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Veröffentlicht in:Electronics letters 2013-03, Vol.49 (7), p.1-1
Hauptverfasser: Ho, Han-Chieh, Gao, Zong-Yan, Lin, Heng-Kuang, Chiu, Pei-Chin, Hsin, Yue-Ming, Chyi, Jen-Inn
Format: Artikel
Sprache:eng
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Zusammenfassung:This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shiftthreshold voltage from 0.47 to 0 V. A 0.2 µm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak g[sub]m[/sub] of 83 mS/mm. [PUBLICATION ABSTRACT]
ISSN:0013-5194
1350-911X