Photoluminescence characterization of a high-efficiency Cu2ZnSnS4 device

We report on low-temperature (4 K) photoluminescence of an 8.3% efficient Cu2ZnSnS4 photovoltaic device. Measurements were recorded as a function of excitation intensity, and the evolution of the resulting spectra is discussed. The spectra indicate that the radiative recombination is characteristic...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2013-10, Vol.114 (15)
Hauptverfasser: Gershon, Talia, Shin, Byungha, Bojarczuk, Nestor, Gokmen, Tayfun, Lu, Siyuan, Guha, Supratik
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report on low-temperature (4 K) photoluminescence of an 8.3% efficient Cu2ZnSnS4 photovoltaic device. Measurements were recorded as a function of excitation intensity, and the evolution of the resulting spectra is discussed. The spectra indicate that the radiative recombination is characteristic of heavily compensated material with a high quasi donor-acceptor pair density, as determined by the relationship between peak height, peak position, and excitation intensity, as well as the carrier lifetimes at different wavelengths. The blue-shift of the defect-derived peak position is used to estimate the quasi donor-acceptor pair spacing and density. The data indicate an average pair spacing of roughly 3.3 nm, yielding an overall total radiative-defect density of ∼1.3 × 1019 cm−3.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4825317