Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes
The forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes are studied by temperature dependent current-voltage (T-I-V) measurements from 298 to 473 K. The zero-bias barrier height qϕBn and ideality factor values determined based on the conventional thermionic-emission (TE) model ar...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 2013-10, Vol.114 (14) |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 14 |
container_start_page | |
container_title | Journal of applied physics |
container_volume | 114 |
creator | Yan, Dawei Jiao, Jinping Ren, Jian Yang, Guofeng Gu, Xiaofeng |
description | The forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes are studied by temperature dependent current-voltage (T-I-V) measurements from 298 to 473 K. The zero-bias barrier height qϕBn and ideality factor values determined based on the conventional thermionic-emission (TE) model are strong functions of temperature, which cannot be explained by the standard TE theory. Various transport models are considered to analyze the experimental I-V data. The fitting results indicate that the increased current at low bias is due to the trap-assisted tunneling with an effective trap density of about 8.8 × 106 cm−2, while the high-bias current flow is dominated by the TE transport mechanism, accompanied by a significant series resistance effect. By fitting the high-forward-bias I-V characteristics, the effective qϕBn values with a small negative temperature coefficient are obtained. The temperature dependence of the saturation tunneling current and qϕBn is finally explained by considering the thermally induced band gap shrinkage effect. |
doi_str_mv | 10.1063/1.4824296 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1475539798</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1475539798</sourcerecordid><originalsourceid>FETCH-LOGICAL-c328t-ccfc7389ab77f65df43bb306d8fc1eebd2763799a783978b8eed1f477afe5cfe3</originalsourceid><addsrcrecordid>eNotULFOwzAUtBBIlMLAH3iEIY0dJ7E9VhUtSFUZgNly7Gc1kMTFdoT69w1qh9Mtd6e7Q-iRkgUlNcvpohRFWcj6Cs0oETLjVUWu0YyQgmZCcnmL7mL8JoRSweQMbdY-_OlgsRlDgCHhFPQQDz4k3IPZ66GNfcTtgHdtvhyzZbfRu3wC_jB7n9LPEdvWW4j36MbpLsLDhefoa_3yuXrNtu-bt9VymxlWiJQZ4wxnQuqGc1dX1pWsaRiprXCGAjS24DXjUmo-teOiEQCWupJz7aAyDtgcPZ1zD8H_jhCT6ttooOv0AH6MipbT4MkqxSR9PktN8DEGcOoQ2l6Ho6JE_Z-lqLqcxU4ly1wk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1475539798</pqid></control><display><type>article</type><title>Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Yan, Dawei ; Jiao, Jinping ; Ren, Jian ; Yang, Guofeng ; Gu, Xiaofeng</creator><creatorcontrib>Yan, Dawei ; Jiao, Jinping ; Ren, Jian ; Yang, Guofeng ; Gu, Xiaofeng</creatorcontrib><description>The forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes are studied by temperature dependent current-voltage (T-I-V) measurements from 298 to 473 K. The zero-bias barrier height qϕBn and ideality factor values determined based on the conventional thermionic-emission (TE) model are strong functions of temperature, which cannot be explained by the standard TE theory. Various transport models are considered to analyze the experimental I-V data. The fitting results indicate that the increased current at low bias is due to the trap-assisted tunneling with an effective trap density of about 8.8 × 106 cm−2, while the high-bias current flow is dominated by the TE transport mechanism, accompanied by a significant series resistance effect. By fitting the high-forward-bias I-V characteristics, the effective qϕBn values with a small negative temperature coefficient are obtained. The temperature dependence of the saturation tunneling current and qϕBn is finally explained by considering the thermally induced band gap shrinkage effect.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4824296</identifier><language>eng</language><subject>Density</subject><ispartof>Journal of applied physics, 2013-10, Vol.114 (14)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-ccfc7389ab77f65df43bb306d8fc1eebd2763799a783978b8eed1f477afe5cfe3</citedby><cites>FETCH-LOGICAL-c328t-ccfc7389ab77f65df43bb306d8fc1eebd2763799a783978b8eed1f477afe5cfe3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids></links><search><creatorcontrib>Yan, Dawei</creatorcontrib><creatorcontrib>Jiao, Jinping</creatorcontrib><creatorcontrib>Ren, Jian</creatorcontrib><creatorcontrib>Yang, Guofeng</creatorcontrib><creatorcontrib>Gu, Xiaofeng</creatorcontrib><title>Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes</title><title>Journal of applied physics</title><description>The forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes are studied by temperature dependent current-voltage (T-I-V) measurements from 298 to 473 K. The zero-bias barrier height qϕBn and ideality factor values determined based on the conventional thermionic-emission (TE) model are strong functions of temperature, which cannot be explained by the standard TE theory. Various transport models are considered to analyze the experimental I-V data. The fitting results indicate that the increased current at low bias is due to the trap-assisted tunneling with an effective trap density of about 8.8 × 106 cm−2, while the high-bias current flow is dominated by the TE transport mechanism, accompanied by a significant series resistance effect. By fitting the high-forward-bias I-V characteristics, the effective qϕBn values with a small negative temperature coefficient are obtained. The temperature dependence of the saturation tunneling current and qϕBn is finally explained by considering the thermally induced band gap shrinkage effect.</description><subject>Density</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNotULFOwzAUtBBIlMLAH3iEIY0dJ7E9VhUtSFUZgNly7Gc1kMTFdoT69w1qh9Mtd6e7Q-iRkgUlNcvpohRFWcj6Cs0oETLjVUWu0YyQgmZCcnmL7mL8JoRSweQMbdY-_OlgsRlDgCHhFPQQDz4k3IPZ66GNfcTtgHdtvhyzZbfRu3wC_jB7n9LPEdvWW4j36MbpLsLDhefoa_3yuXrNtu-bt9VymxlWiJQZ4wxnQuqGc1dX1pWsaRiprXCGAjS24DXjUmo-teOiEQCWupJz7aAyDtgcPZ1zD8H_jhCT6ttooOv0AH6MipbT4MkqxSR9PktN8DEGcOoQ2l6Ho6JE_Z-lqLqcxU4ly1wk</recordid><startdate>20131014</startdate><enddate>20131014</enddate><creator>Yan, Dawei</creator><creator>Jiao, Jinping</creator><creator>Ren, Jian</creator><creator>Yang, Guofeng</creator><creator>Gu, Xiaofeng</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20131014</creationdate><title>Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes</title><author>Yan, Dawei ; Jiao, Jinping ; Ren, Jian ; Yang, Guofeng ; Gu, Xiaofeng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-ccfc7389ab77f65df43bb306d8fc1eebd2763799a783978b8eed1f477afe5cfe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Density</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yan, Dawei</creatorcontrib><creatorcontrib>Jiao, Jinping</creatorcontrib><creatorcontrib>Ren, Jian</creatorcontrib><creatorcontrib>Yang, Guofeng</creatorcontrib><creatorcontrib>Gu, Xiaofeng</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yan, Dawei</au><au>Jiao, Jinping</au><au>Ren, Jian</au><au>Yang, Guofeng</au><au>Gu, Xiaofeng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes</atitle><jtitle>Journal of applied physics</jtitle><date>2013-10-14</date><risdate>2013</risdate><volume>114</volume><issue>14</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes are studied by temperature dependent current-voltage (T-I-V) measurements from 298 to 473 K. The zero-bias barrier height qϕBn and ideality factor values determined based on the conventional thermionic-emission (TE) model are strong functions of temperature, which cannot be explained by the standard TE theory. Various transport models are considered to analyze the experimental I-V data. The fitting results indicate that the increased current at low bias is due to the trap-assisted tunneling with an effective trap density of about 8.8 × 106 cm−2, while the high-bias current flow is dominated by the TE transport mechanism, accompanied by a significant series resistance effect. By fitting the high-forward-bias I-V characteristics, the effective qϕBn values with a small negative temperature coefficient are obtained. The temperature dependence of the saturation tunneling current and qϕBn is finally explained by considering the thermally induced band gap shrinkage effect.</abstract><doi>10.1063/1.4824296</doi></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0021-8979 |
ispartof | Journal of applied physics, 2013-10, Vol.114 (14) |
issn | 0021-8979 1089-7550 |
language | eng |
recordid | cdi_proquest_miscellaneous_1475539798 |
source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
subjects | Density |
title | Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T03%3A23%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Forward%20current%20transport%20mechanisms%20in%20Ni/Au-AlGaN/GaN%20Schottky%20diodes&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Yan,%20Dawei&rft.date=2013-10-14&rft.volume=114&rft.issue=14&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.4824296&rft_dat=%3Cproquest_cross%3E1475539798%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1475539798&rft_id=info:pmid/&rfr_iscdi=true |