Enhanced flux pinning in IR PLD grown Y-doped Bi-2212 films

► We study the effects of Y-doping on the flux pinning of IR PLD grown Bi-2212 films. ► We determined magnetoresistance MR and Jc to evaluate flux pinning. ► Minimum MR and highest Jc at 25% Y-doping. ► Improved flux pinning is related to the shrinking of Cu–O planes distance. ► Optimum carrier concentration also results to effective flux pinning. The effects of Y-doping on the flux pinning properties of IR PLD grown Bi-2212 films was studied using magneto-transport measurements. The maximum magnetoresistance MRmax and critical current density Jc were obtained to measure flux pinning. Results showed that Y substitution on Ca site significantly suppressed vortex movement. The MRmax decreases with Y content while a 77% improvement in the self field Jc0 at 70K was achieved at an optimum doping level of 25%. The enhanced flux pinning was related to the Cu–O planes shrinking and optimum carrier concentration suggesting a strong attractive inter-pancake interaction and conduction along the c-axis.