Digging up bulk band dispersion buried under a passivation layer
We report angle-resolved photoemission spectroscopy (ARPES) on a GaAs thin film protected by an amorphous As layer with thickness exceeding the typical probing depths of vacuum-ultraviolet rays up to similar to 100 eV. Increasing the probing depth by increasing photon energy into the soft x-ray (SX)...
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| Veröffentlicht in: | Applied physics letters 2012-12, Vol.101 (24) |
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| container_issue | 24 |
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| container_title | Applied physics letters |
| container_volume | 101 |
| creator | Kobayashi, Masaki Muneta, Iriya Schmitt, Thorsten Patthey, Luc Ohya, Sinobu Tanaka, Masaaki Oshima, Masaharu Strocov, Vladimir N |
| description | We report angle-resolved photoemission spectroscopy (ARPES) on a GaAs thin film protected by an amorphous As layer with thickness exceeding the typical probing depths of vacuum-ultraviolet rays up to similar to 100 eV. Increasing the probing depth by increasing photon energy into the soft x-ray (SX) region of several hundred eV clearly exposes the bulk band dispersion of the GaAs underlayer without any surface treatment. Our results demonstrate that the use of SX-ARPES enables access to the three-dimensional band dispersion of buried underlayer through an amorphous overlayer. This opens frontiers in diagnostics of authentic momentum-resolved electronic structure of protected thin-film heterostructures. |
| doi_str_mv | 10.1063/1.4770289 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1464555352</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1323236329</sourcerecordid><originalsourceid>FETCH-LOGICAL-c440t-e988a4c2b26647f047798eb6b863d105187befda39c2c2bcd1d2bc5f2c7821863</originalsourceid><addsrcrecordid>eNqFkE1LAzEQhoMoWKsH_0GOetiayffelPoJBS96DtkkW6Lb3TXpCv33prR3GZhhZh5eZl6EroEsgEh2BwuuFKG6PkEzIEpVDECfohkhhFWyFnCOLnL-Kq2gjM3Q_WNcr2O_xtOIm6n7xo3tPfYxjyHlOPRlmGLweOp9SNji0eYcf-12v-rsLqRLdNbaLoerY52jz-enj-VrtXp_eVs-rCrHOdlWodbackcbKiVXLSlX1jo0stGSeSACtGpC6y2rHS2U8-BLFi11SlMo0BzdHHTHNPxMIW_NJmYXus72YZiyAS65EIKVt_5FGS0hGa0LentAXRpyTqE1Y4obm3YGiNkbasAcDWV_IKFmYg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1323236329</pqid></control><display><type>article</type><title>Digging up bulk band dispersion buried under a passivation layer</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Kobayashi, Masaki ; Muneta, Iriya ; Schmitt, Thorsten ; Patthey, Luc ; Ohya, Sinobu ; Tanaka, Masaaki ; Oshima, Masaharu ; Strocov, Vladimir N</creator><creatorcontrib>Kobayashi, Masaki ; Muneta, Iriya ; Schmitt, Thorsten ; Patthey, Luc ; Ohya, Sinobu ; Tanaka, Masaaki ; Oshima, Masaharu ; Strocov, Vladimir N</creatorcontrib><description>We report angle-resolved photoemission spectroscopy (ARPES) on a GaAs thin film protected by an amorphous As layer with thickness exceeding the typical probing depths of vacuum-ultraviolet rays up to similar to 100 eV. Increasing the probing depth by increasing photon energy into the soft x-ray (SX) region of several hundred eV clearly exposes the bulk band dispersion of the GaAs underlayer without any surface treatment. Our results demonstrate that the use of SX-ARPES enables access to the three-dimensional band dispersion of buried underlayer through an amorphous overlayer. This opens frontiers in diagnostics of authentic momentum-resolved electronic structure of protected thin-film heterostructures.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4770289</identifier><language>eng</language><subject>Diagnostic systems ; Dispersions ; Gallium arsenide ; Gallium arsenides ; Photons ; Protective coatings ; Thin films ; Three dimensional</subject><ispartof>Applied physics letters, 2012-12, Vol.101 (24)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c440t-e988a4c2b26647f047798eb6b863d105187befda39c2c2bcd1d2bc5f2c7821863</citedby><cites>FETCH-LOGICAL-c440t-e988a4c2b26647f047798eb6b863d105187befda39c2c2bcd1d2bc5f2c7821863</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids></links><search><creatorcontrib>Kobayashi, Masaki</creatorcontrib><creatorcontrib>Muneta, Iriya</creatorcontrib><creatorcontrib>Schmitt, Thorsten</creatorcontrib><creatorcontrib>Patthey, Luc</creatorcontrib><creatorcontrib>Ohya, Sinobu</creatorcontrib><creatorcontrib>Tanaka, Masaaki</creatorcontrib><creatorcontrib>Oshima, Masaharu</creatorcontrib><creatorcontrib>Strocov, Vladimir N</creatorcontrib><title>Digging up bulk band dispersion buried under a passivation layer</title><title>Applied physics letters</title><description>We report angle-resolved photoemission spectroscopy (ARPES) on a GaAs thin film protected by an amorphous As layer with thickness exceeding the typical probing depths of vacuum-ultraviolet rays up to similar to 100 eV. Increasing the probing depth by increasing photon energy into the soft x-ray (SX) region of several hundred eV clearly exposes the bulk band dispersion of the GaAs underlayer without any surface treatment. Our results demonstrate that the use of SX-ARPES enables access to the three-dimensional band dispersion of buried underlayer through an amorphous overlayer. This opens frontiers in diagnostics of authentic momentum-resolved electronic structure of protected thin-film heterostructures.</description><subject>Diagnostic systems</subject><subject>Dispersions</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Photons</subject><subject>Protective coatings</subject><subject>Thin films</subject><subject>Three dimensional</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQhoMoWKsH_0GOetiayffelPoJBS96DtkkW6Lb3TXpCv33prR3GZhhZh5eZl6EroEsgEh2BwuuFKG6PkEzIEpVDECfohkhhFWyFnCOLnL-Kq2gjM3Q_WNcr2O_xtOIm6n7xo3tPfYxjyHlOPRlmGLweOp9SNji0eYcf-12v-rsLqRLdNbaLoerY52jz-enj-VrtXp_eVs-rCrHOdlWodbackcbKiVXLSlX1jo0stGSeSACtGpC6y2rHS2U8-BLFi11SlMo0BzdHHTHNPxMIW_NJmYXus72YZiyAS65EIKVt_5FGS0hGa0LentAXRpyTqE1Y4obm3YGiNkbasAcDWV_IKFmYg</recordid><startdate>20121210</startdate><enddate>20121210</enddate><creator>Kobayashi, Masaki</creator><creator>Muneta, Iriya</creator><creator>Schmitt, Thorsten</creator><creator>Patthey, Luc</creator><creator>Ohya, Sinobu</creator><creator>Tanaka, Masaaki</creator><creator>Oshima, Masaharu</creator><creator>Strocov, Vladimir N</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20121210</creationdate><title>Digging up bulk band dispersion buried under a passivation layer</title><author>Kobayashi, Masaki ; Muneta, Iriya ; Schmitt, Thorsten ; Patthey, Luc ; Ohya, Sinobu ; Tanaka, Masaaki ; Oshima, Masaharu ; Strocov, Vladimir N</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c440t-e988a4c2b26647f047798eb6b863d105187befda39c2c2bcd1d2bc5f2c7821863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Diagnostic systems</topic><topic>Dispersions</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Photons</topic><topic>Protective coatings</topic><topic>Thin films</topic><topic>Three dimensional</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kobayashi, Masaki</creatorcontrib><creatorcontrib>Muneta, Iriya</creatorcontrib><creatorcontrib>Schmitt, Thorsten</creatorcontrib><creatorcontrib>Patthey, Luc</creatorcontrib><creatorcontrib>Ohya, Sinobu</creatorcontrib><creatorcontrib>Tanaka, Masaaki</creatorcontrib><creatorcontrib>Oshima, Masaharu</creatorcontrib><creatorcontrib>Strocov, Vladimir N</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kobayashi, Masaki</au><au>Muneta, Iriya</au><au>Schmitt, Thorsten</au><au>Patthey, Luc</au><au>Ohya, Sinobu</au><au>Tanaka, Masaaki</au><au>Oshima, Masaharu</au><au>Strocov, Vladimir N</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Digging up bulk band dispersion buried under a passivation layer</atitle><jtitle>Applied physics letters</jtitle><date>2012-12-10</date><risdate>2012</risdate><volume>101</volume><issue>24</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report angle-resolved photoemission spectroscopy (ARPES) on a GaAs thin film protected by an amorphous As layer with thickness exceeding the typical probing depths of vacuum-ultraviolet rays up to similar to 100 eV. Increasing the probing depth by increasing photon energy into the soft x-ray (SX) region of several hundred eV clearly exposes the bulk band dispersion of the GaAs underlayer without any surface treatment. Our results demonstrate that the use of SX-ARPES enables access to the three-dimensional band dispersion of buried underlayer through an amorphous overlayer. This opens frontiers in diagnostics of authentic momentum-resolved electronic structure of protected thin-film heterostructures.</abstract><doi>10.1063/1.4770289</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2012-12, Vol.101 (24) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1464555352 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Diagnostic systems Dispersions Gallium arsenide Gallium arsenides Photons Protective coatings Thin films Three dimensional |
| title | Digging up bulk band dispersion buried under a passivation layer |
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