Digging up bulk band dispersion buried under a passivation layer

Digging up bulk band dispersion buried under a passivation layer

We report angle-resolved photoemission spectroscopy (ARPES) on a GaAs thin film protected by an amorphous As layer with thickness exceeding the typical probing depths of vacuum-ultraviolet rays up to similar to 100 eV. Increasing the probing depth by increasing photon energy into the soft x-ray (SX)...

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Veröffentlicht in:Applied physics letters 2012-12, Vol.101 (24)
Hauptverfasser: Kobayashi, Masaki, Muneta, Iriya, Schmitt, Thorsten, Patthey, Luc, Ohya, Sinobu, Tanaka, Masaaki, Oshima, Masaharu, Strocov, Vladimir N
Format: Artikel
Sprache:eng
Schlagworte:
Diagnostic systems
Dispersions
Gallium arsenide
Gallium arsenides
Photons
Protective coatings
Thin films
Three dimensional
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Zusammenfassung:We report angle-resolved photoemission spectroscopy (ARPES) on a GaAs thin film protected by an amorphous As layer with thickness exceeding the typical probing depths of vacuum-ultraviolet rays up to similar to 100 eV. Increasing the probing depth by increasing photon energy into the soft x-ray (SX) region of several hundred eV clearly exposes the bulk band dispersion of the GaAs underlayer without any surface treatment. Our results demonstrate that the use of SX-ARPES enables access to the three-dimensional band dispersion of buried underlayer through an amorphous overlayer. This opens frontiers in diagnostics of authentic momentum-resolved electronic structure of protected thin-film heterostructures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4770289