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We considered the use of strong uniaxial deformation of crystals n-Si, p-Si n-Ge p-Ge for the determination of fundamental parameters of the semiconductors and the parameters defining the transport phenomena in these crystals. It is known that the method of weak uniaxial strain, which characterizes...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2013-05, Vol.417, p.46-48
Hauptverfasser: Kolomoets, V, Ermakov, V, Panasyuk, L, Fedosov, S, Orasgulyev, B, Nazarchuk, P
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter
Crystals
Deformation
Piezoresistance
Semiconductors
Spreads
Strain
Transport
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Zusammenfassung:We considered the use of strong uniaxial deformation of crystals n-Si, p-Si n-Ge p-Ge for the determination of fundamental parameters of the semiconductors and the parameters defining the transport phenomena in these crystals. It is known that the method of weak uniaxial strain, which characterizes the piezoresistance of semiconductors, has a fairly significant limitations in terms of its wide spread use for determining the mechanisms of the effect, as well as to determine the parameters of these crystals.
ISSN:0921-4526
DOI:10.1016/j.physb.2013.02.017