Enhanced non-radiative recombination in the vicinity of plasma-etched side walls of luminescing Si/Ge-quantum dot structures

The photoluminescence from plasma etched, wedge shaped Ge-quantum dot arrays is investigated locally. The wedge geometry allows a convenient measurement of the luminescence intensity within a well defined distance from the etched side facets. A zone of reduced photoluminescence with a thickness of s...

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Veröffentlicht in:Applied physics letters 2013-10, Vol.103 (16)
Hauptverfasser: Schilling, J., Talalaev, V., Tonkikh, A., Fuhrmann, B., Heyroth, F., Otto, M.
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Sprache:eng
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Zusammenfassung:The photoluminescence from plasma etched, wedge shaped Ge-quantum dot arrays is investigated locally. The wedge geometry allows a convenient measurement of the luminescence intensity within a well defined distance from the etched side facets. A zone of reduced photoluminescence with a thickness of several hundred nanometers is detected adjacent to the etched facets due to the strong non-radiative surface recombination. Covering the surface with thin layers of aluminium oxide passivates part of the surface states leading to a reduction of the luminescence quenching zone.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4825149