Enhanced non-radiative recombination in the vicinity of plasma-etched side walls of luminescing Si/Ge-quantum dot structures
The photoluminescence from plasma etched, wedge shaped Ge-quantum dot arrays is investigated locally. The wedge geometry allows a convenient measurement of the luminescence intensity within a well defined distance from the etched side facets. A zone of reduced photoluminescence with a thickness of s...
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Veröffentlicht in: | Applied physics letters 2013-10, Vol.103 (16) |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The photoluminescence from plasma etched, wedge shaped Ge-quantum dot arrays is investigated locally. The wedge geometry allows a convenient measurement of the luminescence intensity within a well defined distance from the etched side facets. A zone of reduced photoluminescence with a thickness of several hundred nanometers is detected adjacent to the etched facets due to the strong non-radiative surface recombination. Covering the surface with thin layers of aluminium oxide passivates part of the surface states leading to a reduction of the luminescence quenching zone. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4825149 |