Printed Indium Gallium Zinc Oxide Transistors. Self-Assembled Nanodielectric Effects on Low-Temperature Combustion Growth and Carrier Mobility

Solution-processed amorphous oxide semiconductors (AOSs) are emerging as important electronic materials for displays and transparent electronics. We report here on the fabrication, microstructure, and performance characteristics of inkjet-printed, low-temperature combustion-processed, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) grown on solution-processed hafnia self-assembled nanodielectrics (Hf-SANDs). TFT performance for devices processed below 300 °C includes >4× enhancement in electron mobility (μFE) on Hf-SAND versus SiO2 or ALD-HfO2 gate dielectrics, while other metrics such as subthreshold swing (SS), current on:off ratio (I ON:I OFF), threshold voltage (V th), and gate leakage current (I g) are unchanged or enhanced. Thus, low voltage IGZO/SAND TFT operation (