A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non-Volatile Memory Devices

A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non-Volatile Memory Devices

A light incident angle selectivity of a memory device is demonstrated. As a model system, the ZnO resistive switching device has been selected. Electrical signal is reversibly switched between memristor and resistor behaviors by modulating the light incident angle on the device. Moreover, a liquid p...

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Veröffentlicht in:Advanced materials (Weinheim) 2013-11, Vol.25 (44), p.6423-6429
Hauptverfasser: Park, Jinjoo, Lee, Seunghyup, Lee, Junghan, Yong, Kijung
Format: Artikel
Sprache:eng
Schlagworte:
incident angle
light
memristive switching
superhydrophobicity
ZnO nanorod
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Zusammenfassung:A light incident angle selectivity of a memory device is demonstrated. As a model system, the ZnO resistive switching device has been selected. Electrical signal is reversibly switched between memristor and resistor behaviors by modulating the light incident angle on the device. Moreover, a liquid passivation layer is introduced to achieve stable and reversible exchange between the memristor and WORM behaviors.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201303017