(111)-Oriented Pb(Zr sub(0.52)Ti sub(0.48))O sub(3) thin film on Pt(111)/Si substrate using CoFe sub(2)O sub(4) nano-seed layer by pulsed laser deposition

Perovskite Pb(Zr sub(0.52)Ti sub(0.48))O sub(3) (PZT) thin film with perfect (111)-orientation was achieved on CoFe sub(2)O sub(4) seeded-Pt(111)/Ti/SiO sub(2)/Si substrate by pulsed laser deposition technique using target with limited excess Pb. Pyrochlore phase formation was suppressed on Pt by CoFe sub(2)O sub(4) nano-seed layer (~7 nm), and perovskite PZT was achieved at temperature as low as 550 degree C. CoFe sub(2)O sub(4) seed layer that has perfect (111)-orientation acts as a promoter for perfectly (111)-orientated growth of PZT. PZT film grown at 600 degree C has higher degree of crystalline orientation, lower surface roughness, and compacted microstructure in comparison to the film grown at 550 degree C. The PZT film has a nano-size grain-feature structure with grain size of about 40-60 nm. Perovskite formation was also confirmed by ferroelectric measurement. The ferroelectric properties of PZT film grown at 600 degree C is higher than that grown at 550 degree C which could be attributed to the enhancement of the crystalline orientation, crystallinity, and microstructure of the film.