Morphology of nanostructured luminescent silicon layers

Morphology of nanostructured luminescent silicon layers

We investigated the morphology of layers formed by reaction‐induced vapor phase stain etch. The layers consist of irregularly shaped, rough regions with sizes in the order of tens of microns bounded by cracks and separated by smoother regions. The AFM images revealed sub‐micron cracks and hillocks w...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physica status solidi. C 2004-08, Vol.1 (S2), p.S287-S290
Hauptverfasser: de Vasconcelos, Elder A., Freire, J. A. K., Freire, V. N., dos Santos, B. E. C. A., de Azevedo, W. M., da Silva Jr, E. F.
Format: Artikel
Sprache:eng
Schlagworte:
68.37.Hk
68.37.Ps
81.05.Rm
81.07.Vb
81.10.Bk
Conferences
Cracks
Etching
Morphology
Nanostructure
Reproduction
Silicon
Vapor phases
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We investigated the morphology of layers formed by reaction‐induced vapor phase stain etch. The layers consist of irregularly shaped, rough regions with sizes in the order of tens of microns bounded by cracks and separated by smoother regions. The AFM images revealed sub‐micron cracks and hillocks with columnar aspect, which might correspond to luminescent Si columns a few nanometers wide. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1610-1634
1610-1642
DOI:10.1002/pssc.200405157