Asymmetrical diffusion at interfaces of Mg/SiC multilayers

Interfacial structure of Mg/SiC multilayers as extreme ultra-violet reflectors was studied along with Mg/Si and Mg/C multilayers by means of x-ray reflectometry, x-ray diffraction, x-ray photoemission spectroscopy, and transmission electron microscopy. The interfacial diffusion in the Mg/SiC multila...

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Veröffentlicht in:Optical materials express 2013-05, Vol.3 (5), p.546-555
Hauptverfasser: Li, Haochuan, Zhu, Jingtao, Wang, Zhanshan, Song, Zhuqing, Chen, Hong
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Sprache:eng
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Zusammenfassung:Interfacial structure of Mg/SiC multilayers as extreme ultra-violet reflectors was studied along with Mg/Si and Mg/C multilayers by means of x-ray reflectometry, x-ray diffraction, x-ray photoemission spectroscopy, and transmission electron microscopy. The interfacial diffusion in the Mg/SiC multilayer is found asymmetrical as the interlayers formed at SiC-on-Mg interfaces (2.5 nm) are much thicker than those at Mg-on-SiC interfaces (1.0 nm). Contrary asymmetry is found in the Mg/Si and Mg/C multilayers. An explanation of this phenomenon is suggested based on the investigation results. Our findings may result in improved reflectance of Mg/SiC multilayers by inserting diffusion barriers at the more diffused interfaces.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.3.000546