High-Performance and Low-Power Rewritable SiO sub(x) 1 kbit One Diode-One Resistor Crossbar Memory Array

High-Performance and Low-Power Rewritable SiO sub(x) 1 kbit One Diode-One Resistor Crossbar Memory Array

An entire 1-kilobit crossbar device based upon SiO sub(x)resistive memories with integrated diodes has been made. The SiO sub()based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications.

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Veröffentlicht in:Advanced materials (Weinheim) 2013-09, Vol.25 (34), p.4789-4793
Hauptverfasser: Wang, Gunuk, Lauchner, Adam C, Lin, Jian, Natelson, Douglas, Palem, Krishna V, Tour, James M
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Sprache:eng
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Arrays
Devices
Diodes
Resistors
Silicon dioxide
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container_end_page 4793
container_issue 34
container_start_page 4789
container_title Advanced materials (Weinheim)
container_volume 25
creator Wang, Gunuk
Lauchner, Adam C
Lin, Jian
Natelson, Douglas
Palem, Krishna V
Tour, James M
description An entire 1-kilobit crossbar device based upon SiO sub(x)resistive memories with integrated diodes has been made. The SiO sub()based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications.
doi_str_mv 10.1002/adma.201302047
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source Wiley Online Library All Journals
subjects Arrays
Devices
Diodes
Resistors
Silicon dioxide
title High-Performance and Low-Power Rewritable SiO sub(x) 1 kbit One Diode-One Resistor Crossbar Memory Array
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