High-Performance and Low-Power Rewritable SiO sub(x) 1 kbit One Diode-One Resistor Crossbar Memory Array

High-Performance and Low-Power Rewritable SiO sub(x) 1 kbit One Diode-One Resistor Crossbar Memory Array

An entire 1-kilobit crossbar device based upon SiO sub(x)resistive memories with integrated diodes has been made. The SiO sub()based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications.

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Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2013-09, Vol.25 (34), p.4789-4793
Hauptverfasser: Wang, Gunuk, Lauchner, Adam C, Lin, Jian, Natelson, Douglas, Palem, Krishna V, Tour, James M
Format: Artikel
Sprache:eng
Schlagworte:
Arrays
Devices
Diodes
Resistors
Silicon dioxide
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Beschreibung
Zusammenfassung:An entire 1-kilobit crossbar device based upon SiO sub(x)resistive memories with integrated diodes has been made. The SiO sub()based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201302047