Low loss 40 Gbit/s silicon modulator based on interleaved junctions and fabricated on 300 mm SOI wafers

We demonstrate high-speed silicon modulators based on carrier depletion in interleaved pn junctions fabricated on 300 mm-SOI wafers using CMOS foundry facilities. 950 µm-long Mach Zehnder (MZ) and ring resonator (RR) modulator with a 100 µm radius, were designed, fabricated and characterized. 40 Gbi...

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Veröffentlicht in:Optics express 2013-09, Vol.21 (19), p.22471-22475
Hauptverfasser: Marris-Morini, D, Baudot, C, Fédéli, J-M, Rasigade, G, Vulliet, N, Souhaité, A, Ziebell, M, Rivallin, P, Olivier, S, Crozat, P, Le Roux, X, Bouville, D, Menezo, S, Bœuf, F, Vivien, L
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Sprache:eng
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Zusammenfassung:We demonstrate high-speed silicon modulators based on carrier depletion in interleaved pn junctions fabricated on 300 mm-SOI wafers using CMOS foundry facilities. 950 µm-long Mach Zehnder (MZ) and ring resonator (RR) modulator with a 100 µm radius, were designed, fabricated and characterized. 40 Gbit/s data transmission has been demonstrated for both devices. The MZ modulator exhibited a high extinction ratio of 7.9 dB with only 4 dB on-chip losses at the operating point.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.21.022471