Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO3(001) by Oxygen
Ionic liquid gating of three terminal field effect transistor devices with channels formed from SrTiO3(001) single crystals induces a metallic state in the channel. We show that the metallization is strongly affected by the presence of oxygen gas introduced external to the device whereas argon and n...
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| Veröffentlicht in: | Nano letters 2013-10, Vol.13 (10), p.4675-4678 |
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| container_title | Nano letters |
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| creator | Li, Mingyang Han, Wei Jiang, Xin Jeong, Jaewoo Samant, Mahesh G Parkin, Stuart S. P |
| description | Ionic liquid gating of three terminal field effect transistor devices with channels formed from SrTiO3(001) single crystals induces a metallic state in the channel. We show that the metallization is strongly affected by the presence of oxygen gas introduced external to the device whereas argon and nitrogen have no effect. The suppression of the gating effect is consistent with electric field induced migration of oxygen that we model by oxygen-induced carrier annihilation. |
| doi_str_mv | 10.1021/nl402088f |
| format | Article |
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The suppression of the gating effect is consistent with electric field induced migration of oxygen that we model by oxygen-induced carrier annihilation.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl402088f</identifier><identifier>PMID: 23978006</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Applied sciences ; Condensed matter: structure, mechanical and thermal properties ; Diffusion in nanoscale solids ; Diffusion in solids ; Electric Conductivity ; Electronics ; Exact sciences and technology ; Ion Channel Gating ; Ionic Liquids - chemistry ; Oxides - chemistry ; Oxygen - chemistry ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The suppression of the gating effect is consistent with electric field induced migration of oxygen that we model by oxygen-induced carrier annihilation.</description><subject>Applied sciences</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Diffusion in nanoscale solids</subject><subject>Diffusion in solids</subject><subject>Electric Conductivity</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Ion Channel Gating</subject><subject>Ionic Liquids - chemistry</subject><subject>Oxides - chemistry</subject><subject>Oxygen - chemistry</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Strontium - chemistry</subject><subject>Titanium - chemistry</subject><subject>Transistors</subject><subject>Transport properties of condensed matter (nonelectronic)</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNpF0UFLwzAUB_AgipvTg19AehHmofrSpE16lKFzMOlh81xek1QyurRrWnB-eifW7fTe4ccf3vsTckvhkUJEn1zFIQIpyzMypjGDMEnT6Py4Sz4iV95vACBlMVySUcRSIQGSMclWfdO0xntbu6Aug0XtrAqWdtdbHcyxM-HC6V4ZHbybDqvKfmM30FW7thmbAtCHoNgH2df-07hrclFi5c3NMCfk4_VlPXsLl9l8MXtehhglogtNrBFEqopYSw0KEqWKKOXKFCJRtMQICy0VgC45xIUqi5glKUZSSM0ExpRNyPQvt2nrXW98l2-tV6aq0Jm69znlnHHKhYgP9G6gfbE1Om9au8V2n_8_4QDuB4BeYVW26JT1JydkAozSk0Pl803dt-5wYU4h_y0hP5bAfgBgQHUZ</recordid><startdate>20131009</startdate><enddate>20131009</enddate><creator>Li, Mingyang</creator><creator>Han, Wei</creator><creator>Jiang, Xin</creator><creator>Jeong, Jaewoo</creator><creator>Samant, Mahesh G</creator><creator>Parkin, Stuart S. 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Solid state devices</topic><topic>Strontium - chemistry</topic><topic>Titanium - chemistry</topic><topic>Transistors</topic><topic>Transport properties of condensed matter (nonelectronic)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Mingyang</creatorcontrib><creatorcontrib>Han, Wei</creatorcontrib><creatorcontrib>Jiang, Xin</creatorcontrib><creatorcontrib>Jeong, Jaewoo</creatorcontrib><creatorcontrib>Samant, Mahesh G</creatorcontrib><creatorcontrib>Parkin, Stuart S. 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P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO3(001) by Oxygen</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2013-10-09</date><risdate>2013</risdate><volume>13</volume><issue>10</issue><spage>4675</spage><epage>4678</epage><pages>4675-4678</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>Ionic liquid gating of three terminal field effect transistor devices with channels formed from SrTiO3(001) single crystals induces a metallic state in the channel. We show that the metallization is strongly affected by the presence of oxygen gas introduced external to the device whereas argon and nitrogen have no effect. 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| ispartof | Nano letters, 2013-10, Vol.13 (10), p.4675-4678 |
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| source | ACS Publications; MEDLINE |
| subjects | Applied sciences Condensed matter: structure, mechanical and thermal properties Diffusion in nanoscale solids Diffusion in solids Electric Conductivity Electronics Exact sciences and technology Ion Channel Gating Ionic Liquids - chemistry Oxides - chemistry Oxygen - chemistry Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Strontium - chemistry Titanium - chemistry Transistors Transport properties of condensed matter (nonelectronic) |
| title | Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO3(001) by Oxygen |
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