Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO3(001) by Oxygen

Ionic liquid gating of three terminal field effect transistor devices with channels formed from SrTiO3(001) single crystals induces a metallic state in the channel. We show that the metallization is strongly affected by the presence of oxygen gas introduced external to the device whereas argon and n...

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Veröffentlicht in:	Nano letters 2013-10, Vol.13 (10), p.4675-4678
Hauptverfasser:	Li, Mingyang, Han, Wei, Jiang, Xin, Jeong, Jaewoo, Samant, Mahesh G, Parkin, Stuart S. P
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: structure, mechanical and thermal properties Diffusion in nanoscale solids Diffusion in solids Electric Conductivity Electronics Exact sciences and technology Ion Channel Gating Ionic Liquids - chemistry Oxides - chemistry Oxygen - chemistry Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Strontium - chemistry Titanium - chemistry Transistors Transport properties of condensed matter (nonelectronic)
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Zusammenfassung:	Ionic liquid gating of three terminal field effect transistor devices with channels formed from SrTiO3(001) single crystals induces a metallic state in the channel. We show that the metallization is strongly affected by the presence of oxygen gas introduced external to the device whereas argon and nitrogen have no effect. The suppression of the gating effect is consistent with electric field induced migration of oxygen that we model by oxygen-induced carrier annihilation.
ISSN:	1530-6984 1530-6992
DOI:	10.1021/nl402088f