The realization of an SVGA OLED-on-silicon microdisplay driving circuit
An 800×600 pixel organic light-emitting diode-on-silicon(OLEDoS) driving circuit is proposed.The pixel cell circuit utilizes a subthreshold-voltage-scaling structure which can modulate the pixel current between 170 pA and 11.4 nA.In order to keep the voltage of the column bus at a relatively high le...
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Veröffentlicht in: | Journal of semiconductors 2012-03, Vol.33 (3), p.81-86 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | An 800×600 pixel organic light-emitting diode-on-silicon(OLEDoS) driving circuit is proposed.The pixel cell circuit utilizes a subthreshold-voltage-scaling structure which can modulate the pixel current between 170 pA and 11.4 nA.In order to keep the voltage of the column bus at a relatively high level,the sample-and-hold circuits adopt a ping-pong operation.The driving circuit is fabricated in a commercially available 0.35μm two-poly four-metal 3.3 V mixed-signal CMOS process.The pixel cell area is 15×15μm~2 and the total chip occupies 15.5×12.3 mm~2.Experimental results show that the chip can work properly at a frame frequency of 60 Hz and has a 64 grayscale(monochrome) display.The total power consumption of the chip is about 85 mW with a 3.3 V supply voltage. |
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ISSN: | 1674-4926 |
DOI: | 10.1088/1674-4926/33/3/035006 |