Temperature-Independent Transport in High-Mobility Dinaphtho-Thieno-Thiophene (DNTT) Single Crystal Transistors

The angular and temperature dependence of the field‐effect mobility are investigated for p‐type DNTT single crystals in a vacuum‐gap structure. Temperature‐independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm2 V−1 s−1. Structural characte...

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Veröffentlicht in:	Advanced materials (Weinheim) 2013-07, Vol.25 (25), p.3478-3484
Hauptverfasser:	Xie, Wei, Willa, Kristin, Wu, Yanfei, Häusermann, Roger, Takimiya, Kazuo, Batlogg, Bertram, Frisbie, C. Daniel
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystal structure DNTT single crystals Semiconductor devices Simulation Single crystals Structural analysis Temperature dependence temperature independent transport Transistors Transport trap density of states weak mobility anisotropy
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The angular and temperature dependence of the field‐effect mobility are investigated for p‐type DNTT single crystals in a vacuum‐gap structure. Temperature‐independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm2 V−1 s−1. Structural characterization and simulation suggest exceptionally high‐quality and high‐purity crystals.
ISSN:	0935-9648 1521-4095
DOI:	10.1002/adma.201300886