A 5-GHz Band Low-Phase Noise CMOS VCO Using Above-IC Technologies
ABSTRACT This article presents a 5‐GHz band low phase noise CMOS voltage controlled oscillator (VCO) based on a high quality factor above‐IC inductor that is stacked on the top of a 0.18‐μm RF CMOS process using wafer level package technology. The measured phase noise of the VCO is −119.8 dBc/Hz at...
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Veröffentlicht in: | Microwave and optical technology letters 2013-09, Vol.55 (9), p.2051-2055 |
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Sprache: | eng |
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Zusammenfassung: | ABSTRACT
This article presents a 5‐GHz band low phase noise CMOS voltage controlled oscillator (VCO) based on a high quality factor above‐IC inductor that is stacked on the top of a 0.18‐μm RF CMOS process using wafer level package technology. The measured phase noise of the VCO is −119.8 dBc/Hz at 1 MHz offset frequency, which is an improvement of 6 dB compared to a conventional VCO with on‐chip CMOS inductor. The design challenge of the grounding of the above‐IC inductor stacked on the CMOS structure is investigated in this work. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2051–2055, 2013 |
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ISSN: | 0895-2477 1098-2760 |
DOI: | 10.1002/mop.27791 |