Optical and electrical characterization of transparent Ga-doped ZnO thin films grown by atmospheric spray pyrolysis using diethylzinc solution

Non‐doped and Ga‐doped ZnO film on glass substrate were successfully grown at 150 °C by conventional atmospheric spray pyrolysis using diethylzinc‐based solution. The samples had an average optical transmittance of more than 80% and were strongly a‐axis orientated according to the results of optical transmittance and X‐ray diffraction analysis, respectively. The n‐type Ga‐doped ZnO films had a low resistivity of 2.3 × 10–3 Ωcm, a carrier concentration of 1.1 × 1020 cm–3 and a mobility of 10 cm2 (Vs)–1 at an optimal Ga content of 2 at% upon UV irradiation. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)