Nondestructive method for evaluation of electrical parameters of AlGaN/GaN HEMT heterostructures
Impedance spectroscopy methods were proposed for direct evaluation of electrical properties of the AlGaN/GaN heterostructures. The impedance spectra were measured using a two contact mercury probe. Application of the proper distributed elements equivalent circuits enabled to evaluate not only the ty...
Gespeichert in:
| Veröffentlicht in: | Physica status solidi. C 2013-03, Vol.10 (3), p.490-493 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 493 |
|---|---|
| container_issue | 3 |
| container_start_page | 490 |
| container_title | Physica status solidi. C |
| container_volume | 10 |
| creator | Paszkiewicz, Bogdan Wosko, Mateusz Paszkiewicz, Regina Tlaczala, Marek |
| description | Impedance spectroscopy methods were proposed for direct evaluation of electrical properties of the AlGaN/GaN heterostructures. The impedance spectra were measured using a two contact mercury probe. Application of the proper distributed elements equivalent circuits enabled to evaluate not only the typically obtained parameters of the heterostructures such as sheet carriers concentration and its pinch off voltage but also the dependence of the channel sheet resistance and the mobility of 2DEG on d.c. gate bias (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssc.201200709 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1439731563</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1439731563</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3889-1ae3d087765090df90b3ca891f27ab9d6e4b5c340757b0aa36a61021308488b83</originalsourceid><addsrcrecordid>eNqFkEtP4zAURiMEEq_Zso7Ehk3ae-3EjyWqIAWVzkgwmtkZx3FEIK2LnfD497gKQmg2s7Bs6Z5z5e9LkhOECQKQ6SYEMyGABICD3EkOkCFkyHKyG9-CkYzRAveTwxAeAWgByA6S-6Vb1zb0fjB9-2LTle0fXJ02zqf2RXeD7lu3Tl2T2s6a3rdGd-lGex0568N2cN6VejmNJ51f3NylD9uBGxcO3objZK_RXbA_Pu-j5Pflxd1sni1-llez80VmqBAyQ21pDYJzVoCEupFQUaOFxIZwXcma2bwqDM2BF7wCrSnTMR1BCiIXohL0KDkb9268ex5iIrVqg7Fdp9fWDUFhTiWnWDAa0dN_0Ec3-HX8nUJKYn1EAEZqMlImxgneNmrj25X27wpBbQtX28LVV-FRkKPw2nb2_T-0-nV7O_vuZqPbht6-fbnaPynGKS_Un2WpCnGNZflXqhn9ALv_kv0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1322002801</pqid></control><display><type>article</type><title>Nondestructive method for evaluation of electrical parameters of AlGaN/GaN HEMT heterostructures</title><source>Wiley Online Library All Journals</source><creator>Paszkiewicz, Bogdan ; Wosko, Mateusz ; Paszkiewicz, Regina ; Tlaczala, Marek</creator><creatorcontrib>Paszkiewicz, Bogdan ; Wosko, Mateusz ; Paszkiewicz, Regina ; Tlaczala, Marek</creatorcontrib><description>Impedance spectroscopy methods were proposed for direct evaluation of electrical properties of the AlGaN/GaN heterostructures. The impedance spectra were measured using a two contact mercury probe. Application of the proper distributed elements equivalent circuits enabled to evaluate not only the typically obtained parameters of the heterostructures such as sheet carriers concentration and its pinch off voltage but also the dependence of the channel sheet resistance and the mobility of 2DEG on d.c. gate bias (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6351</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.201200709</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>AlGaN/GaN ; Aluminum gallium nitrides ; Carrier density ; Channels ; Electric potential ; Gallium nitrides ; HEMT ; Heterostructures ; impedance spectroscopy ; Planetary probes ; Reproduction</subject><ispartof>Physica status solidi. C, 2013-03, Vol.10 (3), p.490-493</ispartof><rights>Copyright © 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3889-1ae3d087765090df90b3ca891f27ab9d6e4b5c340757b0aa36a61021308488b83</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssc.201200709$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssc.201200709$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1416,27923,27924,45573,45574</link.rule.ids></links><search><creatorcontrib>Paszkiewicz, Bogdan</creatorcontrib><creatorcontrib>Wosko, Mateusz</creatorcontrib><creatorcontrib>Paszkiewicz, Regina</creatorcontrib><creatorcontrib>Tlaczala, Marek</creatorcontrib><title>Nondestructive method for evaluation of electrical parameters of AlGaN/GaN HEMT heterostructures</title><title>Physica status solidi. C</title><addtitle>Phys. Status Solidi C</addtitle><description>Impedance spectroscopy methods were proposed for direct evaluation of electrical properties of the AlGaN/GaN heterostructures. The impedance spectra were measured using a two contact mercury probe. Application of the proper distributed elements equivalent circuits enabled to evaluate not only the typically obtained parameters of the heterostructures such as sheet carriers concentration and its pinch off voltage but also the dependence of the channel sheet resistance and the mobility of 2DEG on d.c. gate bias (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><subject>AlGaN/GaN</subject><subject>Aluminum gallium nitrides</subject><subject>Carrier density</subject><subject>Channels</subject><subject>Electric potential</subject><subject>Gallium nitrides</subject><subject>HEMT</subject><subject>Heterostructures</subject><subject>impedance spectroscopy</subject><subject>Planetary probes</subject><subject>Reproduction</subject><issn>1862-6351</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkEtP4zAURiMEEq_Zso7Ehk3ae-3EjyWqIAWVzkgwmtkZx3FEIK2LnfD497gKQmg2s7Bs6Z5z5e9LkhOECQKQ6SYEMyGABICD3EkOkCFkyHKyG9-CkYzRAveTwxAeAWgByA6S-6Vb1zb0fjB9-2LTle0fXJ02zqf2RXeD7lu3Tl2T2s6a3rdGd-lGex0568N2cN6VejmNJ51f3NylD9uBGxcO3objZK_RXbA_Pu-j5Pflxd1sni1-llez80VmqBAyQ21pDYJzVoCEupFQUaOFxIZwXcma2bwqDM2BF7wCrSnTMR1BCiIXohL0KDkb9268ex5iIrVqg7Fdp9fWDUFhTiWnWDAa0dN_0Ec3-HX8nUJKYn1EAEZqMlImxgneNmrj25X27wpBbQtX28LVV-FRkKPw2nb2_T-0-nV7O_vuZqPbht6-fbnaPynGKS_Un2WpCnGNZflXqhn9ALv_kv0</recordid><startdate>201303</startdate><enddate>201303</enddate><creator>Paszkiewicz, Bogdan</creator><creator>Wosko, Mateusz</creator><creator>Paszkiewicz, Regina</creator><creator>Tlaczala, Marek</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SR</scope><scope>JG9</scope></search><sort><creationdate>201303</creationdate><title>Nondestructive method for evaluation of electrical parameters of AlGaN/GaN HEMT heterostructures</title><author>Paszkiewicz, Bogdan ; Wosko, Mateusz ; Paszkiewicz, Regina ; Tlaczala, Marek</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3889-1ae3d087765090df90b3ca891f27ab9d6e4b5c340757b0aa36a61021308488b83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>AlGaN/GaN</topic><topic>Aluminum gallium nitrides</topic><topic>Carrier density</topic><topic>Channels</topic><topic>Electric potential</topic><topic>Gallium nitrides</topic><topic>HEMT</topic><topic>Heterostructures</topic><topic>impedance spectroscopy</topic><topic>Planetary probes</topic><topic>Reproduction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Paszkiewicz, Bogdan</creatorcontrib><creatorcontrib>Wosko, Mateusz</creatorcontrib><creatorcontrib>Paszkiewicz, Regina</creatorcontrib><creatorcontrib>Tlaczala, Marek</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Materials Research Database</collection><jtitle>Physica status solidi. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Paszkiewicz, Bogdan</au><au>Wosko, Mateusz</au><au>Paszkiewicz, Regina</au><au>Tlaczala, Marek</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nondestructive method for evaluation of electrical parameters of AlGaN/GaN HEMT heterostructures</atitle><jtitle>Physica status solidi. C</jtitle><addtitle>Phys. Status Solidi C</addtitle><date>2013-03</date><risdate>2013</risdate><volume>10</volume><issue>3</issue><spage>490</spage><epage>493</epage><pages>490-493</pages><issn>1862-6351</issn><eissn>1610-1642</eissn><abstract>Impedance spectroscopy methods were proposed for direct evaluation of electrical properties of the AlGaN/GaN heterostructures. The impedance spectra were measured using a two contact mercury probe. Application of the proper distributed elements equivalent circuits enabled to evaluate not only the typically obtained parameters of the heterostructures such as sheet carriers concentration and its pinch off voltage but also the dependence of the channel sheet resistance and the mobility of 2DEG on d.c. gate bias (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssc.201200709</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1862-6351 |
| ispartof | Physica status solidi. C, 2013-03, Vol.10 (3), p.490-493 |
| issn | 1862-6351 1610-1642 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1439731563 |
| source | Wiley Online Library All Journals |
| subjects | AlGaN/GaN Aluminum gallium nitrides Carrier density Channels Electric potential Gallium nitrides HEMT Heterostructures impedance spectroscopy Planetary probes Reproduction |
| title | Nondestructive method for evaluation of electrical parameters of AlGaN/GaN HEMT heterostructures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T00%3A10%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Nondestructive%20method%20for%20evaluation%20of%20electrical%20parameters%20of%20AlGaN/GaN%20HEMT%20heterostructures&rft.jtitle=Physica%20status%20solidi.%20C&rft.au=Paszkiewicz,%20Bogdan&rft.date=2013-03&rft.volume=10&rft.issue=3&rft.spage=490&rft.epage=493&rft.pages=490-493&rft.issn=1862-6351&rft.eissn=1610-1642&rft_id=info:doi/10.1002/pssc.201200709&rft_dat=%3Cproquest_cross%3E1439731563%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1322002801&rft_id=info:pmid/&rfr_iscdi=true |