Nondestructive method for evaluation of electrical parameters of AlGaN/GaN HEMT heterostructures

Nondestructive method for evaluation of electrical parameters of AlGaN/GaN HEMT heterostructures

Impedance spectroscopy methods were proposed for direct evaluation of electrical properties of the AlGaN/GaN heterostructures. The impedance spectra were measured using a two contact mercury probe. Application of the proper distributed elements equivalent circuits enabled to evaluate not only the ty...

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Veröffentlicht in:Physica status solidi. C 2013-03, Vol.10 (3), p.490-493
Hauptverfasser: Paszkiewicz, Bogdan, Wosko, Mateusz, Paszkiewicz, Regina, Tlaczala, Marek
Format: Artikel
Sprache:eng
Schlagworte:
AlGaN/GaN
Aluminum gallium nitrides
Carrier density
Channels
Electric potential
Gallium nitrides
HEMT
Heterostructures
impedance spectroscopy
Planetary probes
Reproduction
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Zusammenfassung:Impedance spectroscopy methods were proposed for direct evaluation of electrical properties of the AlGaN/GaN heterostructures. The impedance spectra were measured using a two contact mercury probe. Application of the proper distributed elements equivalent circuits enabled to evaluate not only the typically obtained parameters of the heterostructures such as sheet carriers concentration and its pinch off voltage but also the dependence of the channel sheet resistance and the mobility of 2DEG on d.c. gate bias (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.201200709