The Memristive Properties of a Single VO2 Nanowire with Switching Controlled by Self-Heating

A two‐terminal memristor memory based on a single VO2 nanowire is reported that can not only provide switchable resistances in a large range of about four orders of magnitude but can also maintain the resistances by a low bias voltage. The phase transition of the single VO2 nanowire was driven by th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2013-09, Vol.25 (36), p.5098-5103
Hauptverfasser: Bae, Sung-Hwan, Lee, Sangmin, Koo, Hyun, Lin, Long, Jo, Bong Hyun, Park, Chan, Wang, Zhong Lin
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A two‐terminal memristor memory based on a single VO2 nanowire is reported that can not only provide switchable resistances in a large range of about four orders of magnitude but can also maintain the resistances by a low bias voltage. The phase transition of the single VO2 nanowire was driven by the bias voltage of 0.34 V without using any heat source. The memristive behavior of the single VO2 nanowire was confirmed by observing the switching and non‐volatile properties of resistances when voltage pulses and low bias voltage were applied, respectively. Furthermore, multiple retainable resistances in a large range of about four orders of magnitude can be utilized by controlling the number and the amount of voltage pulses under the low bias voltage. This is a key step towards the development of new low‐power and two‐terminal memory devices for next‐generation non‐volatile memories.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201302511