Designing and controlling the metrological parameters of photoelectric transducers based on semiconductors with multiply-charged dopants
The initial data for designing the metrological parameters of photoelectric semiconductor transducers (PST) based on semiconductors with deep multiply-charged dopants are obtained. The ranges of correspondence between the energy characteristic of PST with multiply-charged dopants and the linear oper...
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Veröffentlicht in: | Automation and remote control 2013-02, Vol.74 (2), p.288-294 |
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Sprache: | eng |
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