Designing and controlling the metrological parameters of photoelectric transducers based on semiconductors with multiply-charged dopants

The initial data for designing the metrological parameters of photoelectric semiconductor transducers (PST) based on semiconductors with deep multiply-charged dopants are obtained. The ranges of correspondence between the energy characteristic of PST with multiply-charged dopants and the linear operation mode are studied. It is demonstrated that an appropriate choice of a deep multiply-charged dopant enables designing an PST with a given pass band, an improved signal/noise ratio and a higher operating temperature. Moreover, it is shown that combining control and measuring optical channels in a single photodetector allows for implementing the control method for the PST spectral sensitivity during operation.