Diamagnetic and Electrical Properties of Si x Mo2S3−x (x=0.1, 0.2, 0.33, 0.5) and A0.1Mo2S3−x (A=C, B, and Ru)

Mo2S3 doped with Si, C, B, and Ru, is identified to bear the same crystalline structure P21/m as that of Mo2S3 through XRD analysis. Diamagnetic transitions with ? m ?10?4 emu/g?Oe at temperature ranging from 2 K to 6 K were observed in the doped samples of Si x Mo2S3?x (x=0.1, 0.2, 0.33, 0.5). And both of the x=0.2 and 0.5 samples were found to have double diamagnetic transitions with higher T c at the same temperature of 6.01 K, while Si x Mo2S3?x of x=0.33 displayed an extra ferromagnetic-like response at 63 K. The corresponding transition in resistivity of Si x Mo2S3?x with x=0.1 was noticed to show a mild drop with less than 10 % of its original transition values as measured down to 2 K. But a superconducting-like magnetic field dependence on the phase transition of resistivity was also noted. Its diamagnetic signals were greatly reduced when the applied magnetic fields were raised to 103 Oes. In the doped samples of A0.1Mo2S2.9 (A=C, B, and Ru), the phase transition in resistivity at 4.08 K, 4.62 K, and 4.35 K, respectively, exhibited similar fashion as that in the case of Si0.1Mo2S2.9.