Properties of pulse electrodeposited copper indium selenide films

Copper Indium Selenide films were deposited by the pulse plating technique at different bath temperatures in the range of 30–80 °C and at 50 % duty cycle (15 s ON and 15 s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium selenide films. The band gap...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2013-07, Vol.24 (7), p.2398-2403
Hauptverfasser:	Shanmugavel, A., Srinivasan, K., Murali, K. R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Chalcopyrite Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Copper indium selenides Cross-disciplinary physics: materials science rheology DEPOSITION Diffraction ELECTRODEPOSITION Electrodeposition, electroplating ELECTRODES Electron, ion, and scanning probe microscopy ELECTRONIC PRODUCTS Electronics Exact sciences and technology Grain size GRAIN SIZE AND SHAPE Materials Materials Science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Optical and Electronic Materials Physics PLATING Pulse plating Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc SELENIDES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Structure of solids and liquids crystallography SURFACE FINISH Surface roughness
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Zusammenfassung:	Copper Indium Selenide films were deposited by the pulse plating technique at different bath temperatures in the range of 30–80 °C and at 50 % duty cycle (15 s ON and 15 s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium selenide films. The band gap of the films decreased from 1.17 to 1.05 eV with decrease of duty cycle. Atomic force microscope studies indicated that the surface roughness and grain size increased with duty cycle. Room temperature resistivity of the films is in the range of 0.01–2.0 ohm cm. Films deposited at 50 % duty cycle have exhibited a V oc of 0.59 V, J sc of 15 mA cm −2 , FF of 0.75 and efficiency of 6.64 %.
ISSN:	0957-4522 1573-482X
DOI:	10.1007/s10854-013-1108-3