EOT Scaling of rm TiO 2 / rm Al 2 rm O 3 on Germanium pMOSFETs and Impact of Gate Metal Selection

rm TiO 2 / rm Al 2 rm O 3 / rm Ge gate stacks have promising characteristics for future germanium-channel high-performance MOSFETs. In this letter, rm TiO 2 / rm Al 2 rm O 3 bilayer high-k dielectrics with EOT 0.65 nm are demonstrated and used in Ge pMOSFETs for the first time, giving low subthreshold swing (71 mV/dec) and large on-state current (28 A/um). In addition, detailed investigations of these devices with two different gate metals-Al/W and Al/Pt-are performed for stable metal/ rm TiO 2 interfaces and EOT scaling.