2.8??m emission from type-I quantum wells grown on InAsxP1?x/InP metamorphic graded buffers
We report 2.8 mu m emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAsxP1-x step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 106 cm-2. High-resolu...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2012-01, Vol.101 (25) |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 25 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 101 |
| creator | Jung, Daehwan Song, Yuncheng Yu, Lan Wasserman, Daniel Larry Lee, Minjoo |
| description | We report 2.8 mu m emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAsxP1-x step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 106 cm-2. High-resolution x-ray diffraction scans showed strong satellites from multiple quantum wells grown on metamorphic buffers, and cross-sectional transmission electron microscopy revealed smooth and coherent quantum well interfaces. Room-temperature photoluminescence emission at 2.8 mu m with a narrow linewidth ( similar to 50 meV) shows the promise of metamorphic growth for mid-infrared laser diodes on InP. |
| doi_str_mv | 10.1063/1.4773024 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1417884323</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1417884323</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_14178843233</originalsourceid><addsrcrecordid>eNqVjrFuwjAURT0UCQoM_YM3siTYcSBhiqoKRDYGNgZkkheaKraDXyzo3-OBH2C6utLRuZexL8FjwddyKeI0yyRP0g824ZzLaL1ZiTH7JPoLdZVIOWGnJM6LQgPqlqi1BhpnNQz_PUYl3Lwyg9dwx64juDp7NxCQ0nzT4yCKx7I0B9A4KG1d_9tWAVE11nDxTYOOZmzUqI5w_sopW-y2x5991Dt780jDOYxWwa0MWk9nkYosz1MZjr2BPgEKE0i4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1417884323</pqid></control><display><type>article</type><title>2.8??m emission from type-I quantum wells grown on InAsxP1?x/InP metamorphic graded buffers</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Jung, Daehwan ; Song, Yuncheng ; Yu, Lan ; Wasserman, Daniel ; Larry Lee, Minjoo</creator><creatorcontrib>Jung, Daehwan ; Song, Yuncheng ; Yu, Lan ; Wasserman, Daniel ; Larry Lee, Minjoo</creatorcontrib><description>We report 2.8 mu m emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAsxP1-x step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 106 cm-2. High-resolution x-ray diffraction scans showed strong satellites from multiple quantum wells grown on metamorphic buffers, and cross-sectional transmission electron microscopy revealed smooth and coherent quantum well interfaces. Room-temperature photoluminescence emission at 2.8 mu m with a narrow linewidth ( similar to 50 meV) shows the promise of metamorphic growth for mid-infrared laser diodes on InP.</description><identifier>ISSN: 0003-6951</identifier><identifier>DOI: 10.1063/1.4773024</identifier><language>eng</language><subject>Buffers ; Cross sections ; Density ; Emission ; Indium phosphides ; Metamorphic ; Quantum wells ; Threading dislocations</subject><ispartof>Applied physics letters, 2012-01, Vol.101 (25)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Jung, Daehwan</creatorcontrib><creatorcontrib>Song, Yuncheng</creatorcontrib><creatorcontrib>Yu, Lan</creatorcontrib><creatorcontrib>Wasserman, Daniel</creatorcontrib><creatorcontrib>Larry Lee, Minjoo</creatorcontrib><title>2.8??m emission from type-I quantum wells grown on InAsxP1?x/InP metamorphic graded buffers</title><title>Applied physics letters</title><description>We report 2.8 mu m emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAsxP1-x step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 106 cm-2. High-resolution x-ray diffraction scans showed strong satellites from multiple quantum wells grown on metamorphic buffers, and cross-sectional transmission electron microscopy revealed smooth and coherent quantum well interfaces. Room-temperature photoluminescence emission at 2.8 mu m with a narrow linewidth ( similar to 50 meV) shows the promise of metamorphic growth for mid-infrared laser diodes on InP.</description><subject>Buffers</subject><subject>Cross sections</subject><subject>Density</subject><subject>Emission</subject><subject>Indium phosphides</subject><subject>Metamorphic</subject><subject>Quantum wells</subject><subject>Threading dislocations</subject><issn>0003-6951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqVjrFuwjAURT0UCQoM_YM3siTYcSBhiqoKRDYGNgZkkheaKraDXyzo3-OBH2C6utLRuZexL8FjwddyKeI0yyRP0g824ZzLaL1ZiTH7JPoLdZVIOWGnJM6LQgPqlqi1BhpnNQz_PUYl3Lwyg9dwx64juDp7NxCQ0nzT4yCKx7I0B9A4KG1d_9tWAVE11nDxTYOOZmzUqI5w_sopW-y2x5991Dt780jDOYxWwa0MWk9nkYosz1MZjr2BPgEKE0i4</recordid><startdate>20120101</startdate><enddate>20120101</enddate><creator>Jung, Daehwan</creator><creator>Song, Yuncheng</creator><creator>Yu, Lan</creator><creator>Wasserman, Daniel</creator><creator>Larry Lee, Minjoo</creator><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20120101</creationdate><title>2.8??m emission from type-I quantum wells grown on InAsxP1?x/InP metamorphic graded buffers</title><author>Jung, Daehwan ; Song, Yuncheng ; Yu, Lan ; Wasserman, Daniel ; Larry Lee, Minjoo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_14178843233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Buffers</topic><topic>Cross sections</topic><topic>Density</topic><topic>Emission</topic><topic>Indium phosphides</topic><topic>Metamorphic</topic><topic>Quantum wells</topic><topic>Threading dislocations</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jung, Daehwan</creatorcontrib><creatorcontrib>Song, Yuncheng</creatorcontrib><creatorcontrib>Yu, Lan</creatorcontrib><creatorcontrib>Wasserman, Daniel</creatorcontrib><creatorcontrib>Larry Lee, Minjoo</creatorcontrib><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jung, Daehwan</au><au>Song, Yuncheng</au><au>Yu, Lan</au><au>Wasserman, Daniel</au><au>Larry Lee, Minjoo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>2.8??m emission from type-I quantum wells grown on InAsxP1?x/InP metamorphic graded buffers</atitle><jtitle>Applied physics letters</jtitle><date>2012-01-01</date><risdate>2012</risdate><volume>101</volume><issue>25</issue><issn>0003-6951</issn><abstract>We report 2.8 mu m emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAsxP1-x step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 106 cm-2. High-resolution x-ray diffraction scans showed strong satellites from multiple quantum wells grown on metamorphic buffers, and cross-sectional transmission electron microscopy revealed smooth and coherent quantum well interfaces. Room-temperature photoluminescence emission at 2.8 mu m with a narrow linewidth ( similar to 50 meV) shows the promise of metamorphic growth for mid-infrared laser diodes on InP.</abstract><doi>10.1063/1.4773024</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2012-01, Vol.101 (25) |
| issn | 0003-6951 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1417884323 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Buffers Cross sections Density Emission Indium phosphides Metamorphic Quantum wells Threading dislocations |
| title | 2.8??m emission from type-I quantum wells grown on InAsxP1?x/InP metamorphic graded buffers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-30T19%3A22%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=2.8??m%20emission%20from%20type-I%20quantum%20wells%20grown%20on%20InAsxP1?x/InP%20metamorphic%20graded%20buffers&rft.jtitle=Applied%20physics%20letters&rft.au=Jung,%20Daehwan&rft.date=2012-01-01&rft.volume=101&rft.issue=25&rft.issn=0003-6951&rft_id=info:doi/10.1063/1.4773024&rft_dat=%3Cproquest%3E1417884323%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1417884323&rft_id=info:pmid/&rfr_iscdi=true |