2.8??m emission from type-I quantum wells grown on InAsxP1?x/InP metamorphic graded buffers

We report 2.8 mu m emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAsxP1-x step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 106 cm-2. High-resolution x-ray diffraction scans showed strong satellites from multiple quantum wells grown on metamorphic buffers, and cross-sectional transmission electron microscopy revealed smooth and coherent quantum well interfaces. Room-temperature photoluminescence emission at 2.8 mu m with a narrow linewidth ( similar to 50 meV) shows the promise of metamorphic growth for mid-infrared laser diodes on InP.