Modeling of a vertical tunneling graphene heterojunction field-effect transistor

Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work function difference between the graphene contact and the tu...

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Veröffentlicht in:	Applied physics letters 2012-07, Vol.101 (3)
Hauptverfasser:	Bala Kumar, S., Seol, Gyungseon, Guo, Jing
Format:	Artikel
Sprache:	eng
Schlagworte:	Channels Computer simulation Devices Graphene Heterojunctions Modulation Stemming Tunneling
Online-Zugang:	Volltext
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