High-efficiency heterojunction solar cells on crystalline germanium substrates
We report stand-alone heterojunction (HJ) solar cells with conversion efficiencies of 5.9% and 7.2% on n-type and p-type crystalline germanium (c-Ge) substrates, respectively. The emitter of the HJ solar cells is formed by growing thin layers of highly doped hydrogenated microcrystalline silicon usi...
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Veröffentlicht in: | Applied physics letters 2012-07, Vol.101 (3) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report stand-alone heterojunction (HJ) solar cells with conversion efficiencies of 5.9% and 7.2% on n-type and p-type crystalline germanium (c-Ge) substrates, respectively. The emitter of the HJ solar cells is formed by growing thin layers of highly doped hydrogenated microcrystalline silicon using plasma-enhanced chemical vapor deposition at temperatures close to 200 °C. The conversion efficiencies of the HJ solar cells are well-comparable with conventional devices fabricated at temperatures as high as 600 °C. We also study the surface passivation of c-Ge with hydrogenated amorphous and microcrystalline Si and correlate the passivation quality with the electrical performance of the HJ solar cells. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4737166 |