Radical formation at the gallium nitride nanowire-electrolyte interface by photoactivated charge transfer

We investigated the transfer of photogenerated charge carriers from GaN nanowires into a surrounding electrolyte by electron paramagnetic resonance (EPR) and fluorescence spectroscopy. Using 5,5-dimethyl-1-pyrroline-N-oxide (DMPO) as a spin trap we find that the formation of hydroxyl radicals domina...

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Veröffentlicht in:Nanotechnology 2013-08, Vol.24 (32), p.325701-325701
Hauptverfasser: Philipps, J M, Müntze, G M, Hille, P, Wallys, J, Schörmann, J, Teubert, J, Hofmann, D M, Eickhoff, M
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Sprache:eng
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Zusammenfassung:We investigated the transfer of photogenerated charge carriers from GaN nanowires into a surrounding electrolyte by electron paramagnetic resonance (EPR) and fluorescence spectroscopy. Using 5,5-dimethyl-1-pyrroline-N-oxide (DMPO) as a spin trap we find that the formation of hydroxyl radicals dominates in acidic, neutral and moderately basic environments, while in an electrolyte with a pH of 13.5 the superoxide formation becomes detectable. We explain the two processes considering the redox potentials for radical formation in the electrolyte as well as the positions of the conduction and valence bands. The role of surface band bending and surface states in the semiconductor is discussed.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/24/32/325701