High-Gain Phototransistors Based on a CVD MoS2 Monolayer
A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W−1) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p‐dopants to MoS2, decreasing the carr...
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| Veröffentlicht in: | Advanced materials (Weinheim) 2013-07, Vol.25 (25), p.3456-3461 |
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| container_title | Advanced materials (Weinheim) |
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| creator | Zhang, Wenjing Huang, Jing-Kai Chen, Chang-Hsiao Chang, Yung-Huang Cheng, Yuh-Jen Li, Lain-Jong |
| description | A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W−1) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p‐dopants to MoS2, decreasing the carrier mobility, photoresponsivity, and photogain. |
| doi_str_mv | 10.1002/adma.201301244 |
| format | Article |
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The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p‐dopants to MoS2, decreasing the carrier mobility, photoresponsivity, and photogain.</description><identifier>ISSN: 0935-9648</identifier><identifier>EISSN: 1521-4095</identifier><identifier>DOI: 10.1002/adma.201301244</identifier><identifier>PMID: 23703933</identifier><language>eng</language><publisher>Weinheim: WILEY-VCH Verlag</publisher><subject>ambient air ; Disulfides - chemistry ; Electric Conductivity ; Light ; Molybdenum - chemistry ; molybdenum disulfides ; photogain ; phototransistors ; Silicon - chemistry ; Silicon Dioxide - chemistry ; Transistors, Electronic ; Volatilization</subject><ispartof>Advanced materials (Weinheim), 2013-07, Vol.25 (25), p.3456-3461</ispartof><rights>Copyright © 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>Copyright © 2013 WILEY-VCH Verlag GmbH & Co. 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Ambient adsorbates act as p‐dopants to MoS2, decreasing the carrier mobility, photoresponsivity, and photogain.</description><subject>ambient air</subject><subject>Disulfides - chemistry</subject><subject>Electric Conductivity</subject><subject>Light</subject><subject>Molybdenum - chemistry</subject><subject>molybdenum disulfides</subject><subject>photogain</subject><subject>phototransistors</subject><subject>Silicon - chemistry</subject><subject>Silicon Dioxide - chemistry</subject><subject>Transistors, Electronic</subject><subject>Volatilization</subject><issn>0935-9648</issn><issn>1521-4095</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNo9kMtPwkAQhzdGI4hePZoevRRnn909YhEwKT4iSuJls20XqfaB3RLlv7cE5LKTzXy_mcyH0CWGPgYgNyYtTJ8ApoAJY0eoiznBPgPFj1EXFOW-Ekx20JlznwCgBIhT1CE0AKoo7SI5yT6W_thkpfe0rJqqqU3pMtdUtfNujbOpV5We8cK3oTetXkj7lFVuNrY-RycLkzt7sa899Dq6m4UTP3oc34eDyM-o4MyXGJihVoo0SXjAGSMsTk0CQpEgkTKWUoHkCx4YSKgUjARYiZgSbpgKFjGlPXS9m7uqq--1dY0uMpfYPDelrdZOY9quUFLyLXq1R9dxYVO9qrPC1Bv9f20LqB3wk-V2c-hj0FuXeutSH1zqwXA6OPzarL_LtnLs7yFr6i8tAhpwPX8Y62gWzqP354ke0T9_FnN8</recordid><startdate>20130705</startdate><enddate>20130705</enddate><creator>Zhang, Wenjing</creator><creator>Huang, Jing-Kai</creator><creator>Chen, Chang-Hsiao</creator><creator>Chang, Yung-Huang</creator><creator>Cheng, Yuh-Jen</creator><creator>Li, Lain-Jong</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>7X8</scope></search><sort><creationdate>20130705</creationdate><title>High-Gain Phototransistors Based on a CVD MoS2 Monolayer</title><author>Zhang, Wenjing ; Huang, Jing-Kai ; Chen, Chang-Hsiao ; Chang, Yung-Huang ; Cheng, Yuh-Jen ; Li, Lain-Jong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i3654-8104a3e86dcc5754424bdac06927c88b889085f57a0c386427196b325a497fb33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>ambient air</topic><topic>Disulfides - chemistry</topic><topic>Electric Conductivity</topic><topic>Light</topic><topic>Molybdenum - chemistry</topic><topic>molybdenum disulfides</topic><topic>photogain</topic><topic>phototransistors</topic><topic>Silicon - chemistry</topic><topic>Silicon Dioxide - chemistry</topic><topic>Transistors, Electronic</topic><topic>Volatilization</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Wenjing</creatorcontrib><creatorcontrib>Huang, Jing-Kai</creatorcontrib><creatorcontrib>Chen, Chang-Hsiao</creatorcontrib><creatorcontrib>Chang, Yung-Huang</creatorcontrib><creatorcontrib>Cheng, Yuh-Jen</creatorcontrib><creatorcontrib>Li, Lain-Jong</creatorcontrib><collection>Istex</collection><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>MEDLINE - Academic</collection><jtitle>Advanced materials (Weinheim)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Wenjing</au><au>Huang, Jing-Kai</au><au>Chen, Chang-Hsiao</au><au>Chang, Yung-Huang</au><au>Cheng, Yuh-Jen</au><au>Li, Lain-Jong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Gain Phototransistors Based on a CVD MoS2 Monolayer</atitle><jtitle>Advanced materials (Weinheim)</jtitle><addtitle>Adv. Mater</addtitle><date>2013-07-05</date><risdate>2013</risdate><volume>25</volume><issue>25</issue><spage>3456</spage><epage>3461</epage><pages>3456-3461</pages><issn>0935-9648</issn><eissn>1521-4095</eissn><abstract>A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W−1) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p‐dopants to MoS2, decreasing the carrier mobility, photoresponsivity, and photogain.</abstract><cop>Weinheim</cop><pub>WILEY-VCH Verlag</pub><pmid>23703933</pmid><doi>10.1002/adma.201301244</doi><tpages>6</tpages></addata></record> |
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| ispartof | Advanced materials (Weinheim), 2013-07, Vol.25 (25), p.3456-3461 |
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| language | eng |
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| source | MEDLINE; Wiley Online Library Journals Frontfile Complete |
| subjects | ambient air Disulfides - chemistry Electric Conductivity Light Molybdenum - chemistry molybdenum disulfides photogain phototransistors Silicon - chemistry Silicon Dioxide - chemistry Transistors, Electronic Volatilization |
| title | High-Gain Phototransistors Based on a CVD MoS2 Monolayer |
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