High-Gain Phototransistors Based on a CVD MoS2 Monolayer

High-Gain Phototransistors Based on a CVD MoS2 Monolayer

A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W−1) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p‐dopants to MoS2, decreasing the carr...

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Veröffentlicht in:Advanced materials (Weinheim) 2013-07, Vol.25 (25), p.3456-3461
Hauptverfasser: Zhang, Wenjing, Huang, Jing-Kai, Chen, Chang-Hsiao, Chang, Yung-Huang, Cheng, Yuh-Jen, Li, Lain-Jong
Format: Artikel
Sprache:eng
Schlagworte:
ambient air
Disulfides - chemistry
Electric Conductivity
Light
Molybdenum - chemistry
molybdenum disulfides
photogain
phototransistors
Silicon - chemistry
Silicon Dioxide - chemistry
Transistors, Electronic
Volatilization
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Zusammenfassung:A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W−1) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p‐dopants to MoS2, decreasing the carrier mobility, photoresponsivity, and photogain.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201301244